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C5914 - 2SC5914

Overview

Power Transistors 2SC5914 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm.

Key Features

  • s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage: VCBO ≥ 1 500 V.
  • High-speed switching: tf < 200 ns.
  • Wide safe operation area.
  • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector-base voltage (Emitter open) VCBO 1 500 18.6±0.5 (2.0) Solder Dip V 5.45±0.3 e Collector-emitter voltage (E-B short) VCES 1 500 V c type) C.