Satisfactory linearity of forward current transfer ratio hFE.
High transition frequency (fT).
Full-pack package which can be installed to the heat sink with one
screw. 1.4±0.2 1.6±0.2
2.6±0.1
/.
Absolute Maximum Ratings TC = 25°C
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
180
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
180
V
sta tinu Emitter-base voltage.
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Power Transistors
2SC5993
Silicon NPN epitaxial planar type
For power amplification For TV VM circuit
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
φ 3.2±0.1
15.0±0.5
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one
screw.
1.4±0.2 1.6±0.2
2.6±0.1
/ ■ Absolute Maximum Ratings TC = 25°C
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
180
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
180
V
sta tinu Emitter-base voltage (Collector open) VEBO
6
V
a e cycle iscon Collector current
IC
1.