C5991
Overview
- Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.
| Part | C5991 |
|---|---|
| Description | 2SC5991 |
| Manufacturer | SANYO |
| Size | 63.10 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| C5993 | Panasonic | Silicon NPN Transistor |