900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

FK3F03080L Datasheet

Silicon N-channel MOSFET

No Preview Available !

DReovcisNioon. . T1 T4-EA-14911
FK3F03080L
Silicon N-channel MOSFET
For switching circuits
Product Standards
MOS FET
FK3F03080L
Unit : mm
„ Features
y Low drive voltage : 2.5 V drive
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
„ Marking Symbol :X8
„ Packaging
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
„ Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
Gate to Source Voltage
VDS
VGS
30
±20
V
Drain Current
Drain Current (Pulsed) *1
Total Power Dissipation
ID
IDp
100
200
mA
PD 100 mW
Channel Temperature
Storage Temperature Range
Tch 150
Tstg -55 to +150
°C
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
ML3-N4-B
SC-101
SOT-883
Internal Connection
Pin Name
1. Gate
2. Source
3. Drain
Established : 2013-12-24
Revised : ####-##-##
Page 1 of 6


Panasonic Electronic Components Datasheet

FK3F03080L Datasheet

Silicon N-channel MOSFET

No Preview Available !

DReovcisNioon. . T1 T4-EA-14911
Product Standards
MOS FET
FK3F03080L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
30
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
1
Gate-source Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
±10
Gate-source Threshold Voltage
Vth ID = 6.9 µA, VDS = 10 V
0.6 2.0
Drain-source On-state Resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 100 mA, VGS = 4.5 V
4.0 12
1.0 1.4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10 V, VGS = 0 V
f = 1 MHz
11
6.8
3.5
Turn-on Delay Time *1
ton
VDD = 3 V, VGS = 0 to 3 V
ID = 10 mA, RL = 300
20
Turn-off Delay Time *1
toff
VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA, RL = 300
100
Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
Unit
V
µA
µA
V
pF
ns
ns
Established : 2013-12-24
Revised : ####-##-##
Page 2 of 6


Part Number FK3F03080L
Description Silicon N-channel MOSFET
Maker Panasonic
Total Page 7 Pages
PDF Download

FK3F03080L Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FK3F03080L Silicon N-channel MOSFET
Panasonic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy