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MA2B064 - Silicon planar type trigger device

Features

  • φ 1.95 max. 24 min. Storage temperature Note).
  • 1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz.
  • 2 : Maximum ambient temperature during operation DO-35 Package Marking Symbol: MA2B064 I Electrical Characteristics Ta = 25°C Parameter Breakover current Breakover voltage.
  • 1 Output voltage.
  • 1 Symbol IBO VBO VO  ∆VBO.
  • 2 : Symmetry of VBO V = VBO I = IBO 28 4 7 0.1 3.5 Conditions Min Typ Max 50 36 Unit µA V V %/°C V Temperature coefficient of breakover voltage Breakover v.

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Datasheet Details

Part number MA2B064
Manufacturer Panasonic
File Size 39.39 KB
Description Silicon planar type trigger device
Datasheet download datasheet MA2B064 Datasheet
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Full PDF Text Transcription

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Trigger Devices MA2B064 Silicon planar type trigger device Unit : mm Thyristor element φ 0.56 max. • Satisfactory symmetry of VBO • Large VO and small IBO I Absolute Maximum Ratings Ta = 25°C Parameter Average total power dissipation Peak current*1 Operating ambient temperature*2 Symbol P(AV) IPM Topr Tstg Rating 150 2.0 100 −55 to +125 Unit mW A °C °C 4.5 max. 24 min. I Features φ 1.95 max. 24 min. Storage temperature Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35 Package Marking Symbol: MA2B064 I Electrical Characteristics Ta = 25°C Parameter Breakover current Breakover voltage*1 Output voltage*1 Symbol IBO VBO VO  ∆VBO *2 : Symmetry of VBO V = VBO I = IBO 28 4 7 0.1 3.
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