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Trigger Devices
MA2B001
Silicon planar type trigger device
Unit : mm
Thyristor TRIAC trigger circuit
φ 0.56 max.
• Satisfactory symmetry of VBO • Large VO and small IBO
I Absolute Maximum Ratings Ta = 25°C
Parameter Average total power dissipation Peak current*1 Operating ambient temperature*2 Symbol P(AV) IPM Topr Tstg Rating 150 2.0 100 −55 to +125 Unit mW A °C °C
4.5 max.
24 min.
I Features
φ 1.95 max. 24 min.
Storage temperature
Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation
DO-35 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Breakover current Breakover voltage*1 Output voltage*1 Symbol IBO VBO VO T.C.(VBO) ∆VBO *2 : Symmetry of VBO V = VBO I = IBO 28 4.0 7.0 0.1 3.
MA2B001 Datasheet
