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Band Switching Diodes
MA2C856 (MA856)
Silicon epitaxial planar type
Unit: mm
For band switching s Features
• Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of tuner
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0.2 max.
1
Cathode
φ 1.6±0.2
2
Anode
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C
1: Cathode 2: Anode DO-34-A1 Package
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC)
*
Symbol IR VF Ct rf VR = 33 V IF = 100 mA
Conditions
Min
Typ
Max 100 1 2 0.85
φ 0.40±0.05
13.
MA856 Datasheet
