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UNR32A9 - Silicon NPN Transistors

Features

  • s.
  • Suitable for high-density mounting downsizing of the equipment.
  • Contribute to low power consumption.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature VCBO VCEO IC PT Tj Tstg 50 50 80 100 125.
  • 55 to +125 Unit V V mA mW °C °C 0.33+.
  • 00..0025 3 0.23+.
  • 00..0025 12 (0.40) (0.40.

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Datasheet Details

Part number UNR32A9
Manufacturer Panasonic
File Size 80.75 KB
Description Silicon NPN Transistors
Datasheet download datasheet UNR32A9 Datasheet

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Full PDF Text Transcription

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Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature VCBO VCEO IC PT Tj Tstg 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C 0.33+–00..0025 3 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° 0.15 min. 0.80±0.05 1.20±0.05 5° Unit: mm 0.10+–00..0025 0.15 min. 0 to 0.01 0.52±0.03 0.15 max.
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