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2PG401 - Insulated Gate Bipolar Transistor

2PG401 Product details

Features

  • q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package 7.2±0.3 0.8±0.2 unit: mm 7.0±0.3 3.0±0.2 3.5±0.2 s.

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Datasheet Details

Part number
2PG401
Manufacturer
Panasonic Semiconductor
File Size
22.05 KB
Datasheet
2PG401_PanasonicSemiconductor.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor Panasonic Semiconductor
Panasonic Semiconductor 2PG401-like datasheet

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