Datasheet Summary
IGBTs
Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera
2.3± 0.1
0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s Applications s...