2PG402 - Insulated Gate Bipolar Transistor

Datasheet Summary

Features

q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s.

Panasonic Semiconductor

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Datasheet Details

Part number	2PG402
Manufacturer	Panasonic Semiconductor
File Size	33.76 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	2PG402 Datasheet
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2PG401 - Insulated Gate Bipolar Transistor

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IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 s Applications s Absolute Maximum Ratings (TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C 2.5± 0.1 2.5± 0.1 0.85± 0.1 4.6± 0.1 0.75± 0.1 0.5± 0.1 0.05 to 0.15 1.0± 0.1 2.3± 0.

Published: Mar 22, 2005 |