q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0±0.3 3.0±0.2
3.5±0.2
s.
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IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0±0.3 3.0±0.2
3.5±0.2
s Applications
q For flash-light for use in a camera
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
s Absolute Maximum Ratings (TC = 25°C)
Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 15 1.3 150 −55 to +150 Unit V V A A W °C °C
1 4.6±0.4 2 3
10.0 –0.
+0.3
0.75±0.1
2.3±0.
2PG401 Datasheet