Datasheet Summary
IGBTs
Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2 unit: mm
7.0±0.3 3.0±0.2
3.5±0.2 s Applications q For flash-light for use in a camera
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2 s...