Transistor
2SA1127
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2634
s Features
q Low noise characteristics.
q High foward current transfer ratio hFE.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–55
–7
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE
fT
Noise voltage
NV
VCB = –10V, IE = 0
–1 –100 nA
VCE = –10V, IB = 0
– 0.01 –1
µA
IC = –10µA, IE = 0
–60
V
IC = –1mA, IB = 0
–55
V
IE = –10µA, IC = 0
–7
V
VCE = –5V, IC = –2mA
180 700
IC = –100mA, IB = –10mA
– 0.6
V
VCE = –1V, IC = –30mA
–1 V
VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
