2SA1124 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
0.45.
0.1
+0.2
V mA mA W ˚C ˚C
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC.
51 TO.
92L Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV.
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Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2632
5.9± 0.2
Unit: mm
4.9± 0.2
q
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –150 –150 –5 –100 –50 1 150 –55 ~ +150 Unit V V
3.2 0.45–0.1 1.27 1.27
+0.2
13.5± 0.5
Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
2SA1124 Datasheet
