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2SA1122 Datasheet PDF

Renesas Electronics 2SA1122

The 2SA1122 is grouped by hFE as follows.
Part No. 2SA1122
Datasheet 2SA1122 Download
Manufacturer
Renesas Electronics
Description Silicon PNP Epitaxial Transistor
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2SA1122 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –55 –5 –100 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA1122

ELECTRICAL CHARACTERISTICS

Item Symbol Min Collector to base breakdown voltage V(BR)CBO –55 Collector to emitter breakdown voltage V(BR)CEO –55 Emitter to base breakdown voltage V(BR)EBO –5 Collector cutoff current ICBO — Emitter cutoff current DC current transfer ratio IEBO hFE*1 — 160 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Note: 1. The 2SA1122 is grouped by hFE as follows. Grade C D Mark CC CD hFE 160 to 320 250 to 500 (Ta = 25°C) Typ Max Unit Test conditions —— V IC = –10 µA, IE = 0 —— V IC = –1 mA, RBE = ∞ —— V IE = –10 µA, IC = 0 — –0.5 µA VCB = –30 V, IE = 0 — –0.5 µA VEB = –2 V, IC = 0 — 500...
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