Kexin Electronics 2SA1122
PNP Transistors
FEATURES
Low frequency amplifier PNP Transistors 2SA1122 TransistIoCrs SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -55 -5 -100 150 150 -55 to +150 Unit V V V mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol Test conditions V(BR)CBO IC = -100uA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -100uA, IC = 0 ICBO VCB = -30 V, IE = 0 IEBO VE...