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DATA SHEET
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver.
FEATURES • Large current capacity with small package: IC(DC) = −7.0 A • Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.