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2SA1129 - PNP Transistor

Key Features

  • Large current capacity with small package: IC(DC) =.
  • 7.0 A.
  • Low collector saturation voltage: VCE(sat) =.
  • 0.3 V MAX. @IC =.
  • 3.0 A, IB =.
  • 0.1 A.
  • Complementary transistor: 2SC2654.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. FEATURES • Large current capacity with small package: IC(DC) = −7.0 A • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.