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2SA1129 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A Large Current Capability-IC= -7A Complement to Type 2SC2654 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal

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isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 1.