Datasheet4U Logo Datasheet4U.com

2SA1129 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1129.

General Description

·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;

IB= -0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A;

2SA1129 Distributor & Price

Compare 2SA1129 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
SavantIC Logo 2SA1129 SILICON POWER TRANSISTOR SavantIC
NEC Logo 2SA1129 PNP Transistor NEC

More Datasheets from Inchange Semiconductor

Part Number Description
2SA1120 POWER TRANSISTOR
2SA1125 POWER TRANSISTOR
2SA1102 POWER TRANSISTOR
2SA1103 POWER TRANSISTOR
2SA1104 POWER TRANSISTOR
2SA1105 POWER TRANSISTOR
2SA1106 POWER TRANSISTOR
2SA1107 POWER TRANSISTOR
2SA1108 POWER TRANSISTOR
2SA1109 POWER TRANSISTOR