2SA1120 Overview
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1120 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A -1.0 V VBE Base-emitter on voltage IC=-4A.
