2SA1123
Key Features
- 5±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 45 -0.1 1.27 +0.2
- 45 -0.1
- 27 +0.2 V V mA mA mW ˚C ˚C 1 2 3
- 3±0.2 V
- 54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = -100V, IE = 0 IC = -0.1mA, IB = 0 IE = -10µA, IC = 0 VCE = -5V, IC = -10mA IC = -30mA, IB = -3mA VCB = -10V, IE = 10mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max -1 Unit µA V V -150 -5 130 450 -1 200 5 150 300 VCE(sat) V MHz pF mV
- h FE Rank classification R 130 ~ 220 S 185 ~ 330 T 260 ~ 450 hFE Rank 1 Transistor PC - Ta
- 0 -80 Ta=25˚C -70 -100 25˚C Ta=75˚C -80 2SA1123 IC - VCE -120 VCE=-5V IC - VBE Collector power dissipation PC (W)
- 9 Collector current IC (mA) -60 -50 -40 -30 -20 -10 0
- 7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20
