Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
s Features
q Allowing supply with the radial taping.
q High transition frequency fT.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–60
–30
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
ICEO
IEBO
hFE*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
– 0.1 µA
–100 µA
–10 µA
70 220
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1
V
Base to emitter voltage
VBE VCE = –10V, IC = –1mA
– 0.7
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
2.8 4.0 dB
22 50 Ω
Common emitter reverse transfer capacitanse Cre
VCE = –10V, IC = –1mA, f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1
