2SA1323 Datasheet Text
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification plementary to 2SC3314
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1 s Features q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
- 30
- 20
- 5
- 60
- 30 300 150
- 55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC- 72 New S Type Package s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance mon emitter reverse transfer capacitanse
(Ta=25˚C)
Symbol ICBO ICEO IEBO hFE
- Conditions VCB =
- 10V, IE = 0 VCE =
- 20V, IB = 0 VEB =
- 5V, IC = 0 VCE =...