2SA1512
Key Features
- 27 1.27 marking 1 2 3 +0.2 0.45-0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 54±0.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10µA, IE = 0 IC = -1mA, IB = 0 IE = -10µA, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -500mA, IB = -50mA*2 IC = -500mA, IB = -50mA*2 150 15
- 2 min typ max -100 -1
- 0±0.2 s Absolute Maximum Ratings
- 6±0.5 Unit nA µA V V V -25 -20 -7 90 25 - 0.4 -1.2 220 V V MHz VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 25 pF Pulse measurement
- 1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 Rank hFE1 1 Transistor PC - Ta 500 -1.2 Ta=25˚C 450 IB=-10µA -1.0 -9µA -8µA -7µA -6µA -5µA -4µA -3µA -2µA -1µA 2SA1512 IC - VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) - IC IC/IB=10 Collector power dissipation PC (mW)
