Datasheet4U Logo Datasheet4U.com

2SB0873 - Silicon PNP epitaxial planar type Transistor

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Large collector current IC Unit: mm 5.9±0.2 4.9±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
  • 30.
  • 20.
  • 7.
  • 5.

📥 Download Datasheet

Datasheet Details

Part number 2SB0873
Manufacturer Panasonic
File Size 96.87 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SB0873 Datasheet

📁 Similar Datasheet

  • 2SB030070MLJY - 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics)
  • 2SB035030MLJY - 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics)
  • 2SB035100ML - 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics)
  • 2SB0774 - Silicon PNP epitaxial planar type Transistors (Panasonic)
  • 2SB0967 - Silicon PNP epitaxial planar type power transistor (Panasonic)
  • 2SB1000 - LOW FREQUENCY POWER AMPLIFIER (Hitachi Semiconductor)
  • 2SB1000A - LOW FREQUENCY POWER AMPLIFIER (Hitachi Semiconductor)
  • 2SB1001 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1001 - Silicon PNP Transistor (Kexin)
  • 2SB1001 - Silicon PNP Transistor (Renesas)
Other Datasheets by Panasonic Semiconductor
  • 2SB0819 - Silicon PNP epitaxial planar type Transistor
  • 2SB0709A - Silicon PNP epitaxial planar type Transistor
  • 2SB0710 - Silicon PNP epitaxial planer type Transistor
  • 2SB0710A - Silicon PNP epitaxial planer type Transistor
  • 2SB0766 - Silicon PNP epitaxial planer type Transistor
  • 2SB0766A - Silicon PNP epitaxial planer type Transistor
  • 2SB0928 - Power Transistors
  • 2SB0928A - Power Transistors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −30 −20 −7 −5 −10 1 150 −55 to +150 Unit V V 1 2 3 0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 V A A W °C °C 2.54±0.
Published: |