* High breakdown voltage: VCBO ≥ 1 500 V
* Wide safe operation area
* Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Col
2SC5912
Panasonic Semiconductor
202.79 KB
Silicon npn triple diffusion mesa type power transistor.
www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ.
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