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2SC5912 Datasheet Silicon NPN triple diffusion mesa type Power Transistor

Manufacturer: Panasonic

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Datasheet Details

Part number 2SC5912
Manufacturer Panasonic
File Size 202.79 KB
Description Silicon NPN triple diffusion mesa type Power Transistor
Datasheet download datasheet 2SC5912 Datasheet

Overview

www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.

Key Features

  • High breakdown voltage: VCBO ≥ 1 500 V.
  • Wide safe operation area.
  • Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
  • Collector power dissipation Ta = 25°C Junction temperature Storage temp.

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