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2SC5904 - NPN Transistor

Key Features

  • s 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage (VCBO ≥ 1 700 V).
  • High-speed switching (tf < 200 nsec).
  • Wide safe operation area.
  • Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 Collector-base voltage (Emitter open) VCBO 1 700 V e e) Collector-emitter voltage (E-B short) VCES 1 700 V c t.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor ■ Features 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 Collector-base voltage (Emitter open) VCBO 1 700 V e e) Collector-emitter voltage (E-B short) VCES 1 700 V c typ Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 5.5±0.3 V n d stage. tinued Emitter-base voltage (Collector open) VEBO 7 (2.