Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
Collector power dissipation Ta = 25°C Junction temperature Storage temp.
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Power Transistors
2SC5912
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.3
5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 −55 to +150 °C °C Unit V V V A A A W
3.3±0.
2SC5912 Datasheet
