2SC5912 - Silicon NPN triple diffusion mesa type Power Transistor

Product Overview

Panasonic Semiconductor

Part number	2SC5912
Manufacturer	Panasonic Semiconductor
File Size	202.79 KB
Description	Silicon NPN triple diffusion mesa type Power Transistor
Datasheet	2SC5912 Datasheet
Additional preview pages of the 2SC5912 datasheet.

High breakdown voltage: VCBO ≥ 1 500 V.
Wide safe operation area.
Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
Collector power dissipation Ta = 25°C Junction temperature Storage temp.

📁 Similar Datasheet

Other Datasheets by Panasonic Semiconductor

Published: Oct 20, 2006 |