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2SC5935 - Silicon NPN Transistor

Features

  • 3.2±0.1 15.0±0.5.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Dielectric breakdown voltage of the package: 5 kV.
  • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 /.
  • Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 e Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip c type) Collector-base voltage (Emitter open) VCBO 200 V n d ge. ed Collector-emitter voltage (Base open).

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Datasheet Details

Part number 2SC5935
Manufacturer Panasonic
File Size 207.03 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC5935 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with one screw. 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 e Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip c type) Collector-base voltage (Emitter open) VCBO 200 V n d ge.
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