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2SD0966 - Silicon NPN Transistor

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP.

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Datasheet Details

Part number 2SD0966
Manufacturer Panasonic Semiconductor
File Size 94.94 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD0966 Datasheet
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www.DataSheet4U.net Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 8.6±0.2 0.45+0.2 –0.1 (1.27) 2.54±0.
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