0.05
+0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings.
65 20 10 150 150.
55 to +150 Unit
0.8
2
1.45
V mA mA mW °C °C
+0.2 1.1.
0.1
1: Source 2: Drain 3: Gate
JEDEC: TO-236 EIAJ: SC-59 Mini Type Pack.
Full PDF Text Transcription for 2SK1103 (Reference)
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2SK1103. For precise diagrams, tables, and layout, please refer to the original PDF.
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Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching Complementary to 2SJ163
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8 –0.3
1.5 –0.05
+0.25
s Features
2.9 –0.05 1.9±0.2
+0.2
q Low ON-resistance q Low-noise characteristics
0.95
1
0.95
3
0.4 –0.05
+0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 150 150 −55 to +150 Unit
0.8
2
1.45
V mA mA mW °C °C
+0.2 1.1 –0.
2SK1103 Datasheet
