2SK2339
2SK2339 is Silicon N-Channel Power F-MOS manufactured by Panasonic.
Features q Avalanche q Low q No Unit : mm
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 energy capability guaranteed
ON-resistance
10.0±0.3 secondary breakdown drive
1.5±0.1 q Low-voltage s Applications
10.5min.
1.5max.
1.1max. q Non-contact q Solenoid q Motor relay drive
0.8±0.1
0.5max. drive equipment mode regulator
2.54±0.3 5.08±0.5 1 2 3 q Control q Switching s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS
- PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 30 1.3 150
- 55 to +150 Unit V V A A m J W ˚C ˚C
1 : Gate 2 : Collector 3 : Emitter N Type Package s Equivalent Circuit
Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature
- L= 5m H, IL= 5A, 1 pulse s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Reverse recovery time Reverse recovery charge Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF trr Qrr Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) VDD= 30V, ID= 5A VGS=10V, R L= 6Ω VDS=10V, VGS= 0, f= 1MHz Condition VDS= 70V, VGS= 0 VDS= 0, VGS=15V ID=1m A, VGS= 0 VDS=10V, ID=1m A VGS=10V, I D= 5A VGS= 4V, ID= 5A VDS=10V, ID= 5A IDR=10A, VGS= 0 L=230µ H, VDD= 30V, VGS = 0 IDR=10A, di/dt= 80A/µ s 0.55 2.2 85 250 20 0.5 0.9 1.9 4.2 96 3 70 1 150 230 5.5
- 1.8 Min Typ Max 10 ±10 90 2.5 230 370 Unit µA µA V V mΩ mΩ S V µs µs p F p F p F µs µs µs ˚C/W ˚C/W
Power F-MOS FETs
Area of safe operation (ASO)
100 Non repetitive pulse TC=25˚C
- Ta
(1) TC=Ta (2) Without heat sink (PD=1.3W) (A)
- L-load
100 TC=25˚C 50 30 20 10...