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2SK2339 - Silicon N-Channel Power F-MOS

Features

  • q Avalanche q Low q No Unit : mm 8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 energy capability guaranteed ON-resistance 10.0±0.3 secondary breakdown drive 1.5±0.1 q Low-voltage s.

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Datasheet Details

Part number 2SK2339
Manufacturer Panasonic Semiconductor
File Size 50.27 KB
Description Silicon N-Channel Power F-MOS
Datasheet download datasheet 2SK2339 Datasheet
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Full PDF Text Transcription

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Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS s Features q Avalanche q Low q No Unit : mm 8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 energy capability guaranteed ON-resistance 10.0±0.3 secondary breakdown drive 1.5±0.1 q Low-voltage s Applications 10.5min. 1.5max. 2.0 1.1max. q Non-contact q Solenoid q Motor relay drive 0.8±0.1 0.5max. drive equipment mode regulator 2.54±0.3 5.08±0.5 1 2 3 q Control q Switching s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 30 1.
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