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2SK2334 - Silicon N-Channel MOS FET

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www. DataSheet4U. com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2334L Silicon N-Channel MOSFET
2SK2334S Silicon N-Channel MOSFET
2SK2330 Silicon N-Channel MOS FET
2SK2330L Silicon N-Channel MOS FET
2SK2330S Silicon N-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3.