q Avalanche q Low q No Unit : mm
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
energy capability guaranteed
ON-resistance
10.0±0.3
secondary breakdown drive
1.5±0.1
q Low-voltage
s.
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Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche q Low q No Unit : mm
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
energy capability guaranteed
ON-resistance
10.0±0.3
secondary breakdown drive
1.5±0.1
q Low-voltage
s Applications
10.5min.
1.5max.
2.0
1.1max.
q Non-contact q Solenoid q Motor
relay
drive
0.8±0.1
0.5max.
drive equipment mode regulator
2.54±0.3 5.08±0.5 1 2 3
q Control
q Switching
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 30 1.
2SK2339 Datasheet
