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2SK662 - Silicon N-Channel Junction FET

This page provides the datasheet information for the 2SK662, a member of the 2SK0662 Silicon N-Channel Junction FET family.

Features

  • 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30.

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Datasheet Details

Part number 2SK662
Manufacturer Panasonic
File Size 84.71 KB
Description Silicon N-Channel Junction FET
Datasheet download datasheet 2SK662 Datasheet
Additional preview pages of the 2SK662 datasheet.

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Full PDF Text Transcription

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Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm (0.425) I Features 0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C 2.0±0.2 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.9+0.2 –0.
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