The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
s Features
q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.2
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
Symbol VDSX VGDO ID IG PD Tj Tstg
Ratings 30 −30 20 10 150 125 −55 to +125
Unit V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.
2SK662 Datasheet
