2SK662 - Silicon N-Channel Junction FET

This page provides the datasheet information for the 2SK662, a member of the 2SK0662 Silicon N-Channel Junction FET family.

Product Overview

Panasonic Semiconductor

Part number	2SK662
Manufacturer	Panasonic Semiconductor
File Size	84.71 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK662 Datasheet
Additional preview pages of the 2SK662 datasheet.

0.3+0.1.
0.0 3 0.15+0.10.
0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30.

Other Datasheets by Panasonic Semiconductor

Published: Jan 6, 2006 |