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Panasonic Electronic Components Datasheet

C3973 Datasheet

2SC3973

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C3973 pdf
Power Transistors
2SC3973, 2SC3973A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3973
base voltage 2SC3973A
VCBO
800
900
Collector to 2SC3973
emitter voltage 2SC3973A
VCES
800
900
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
500
8
15
7
4
45
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SC3973
current
2SC3973A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.8A
IC = 4A, IB = 0.8A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100
µA
100
100 µA
500 V
15
8
1.0 V
1.5 V
20 MHz
1.0 µs
3.0 µs
0.3 µs
1
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Panasonic Electronic Components Datasheet

C3973 Datasheet

2SC3973

No Preview Available !

C3973 pdf
Power Transistors
60
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
25˚C
0.3
100˚C
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
12
TC=25˚C
10
8
IB=1200mA
1000mA
6 800mA
600mA
400mA
4 300mA
200mA
2 100mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC3973, 2SC3973A
VCE(sat) — IC
100
IC/IB=5
30
10
3
1
TC=100˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
1000
300
100
hFE — IC
VCE=5V
30
10
TC=–25˚C
25˚C
3 100˚C
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
0.3 ton
tf
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
Area of safe operation (ASO)
100
30
ICP
Non repetitive pulse
TC=25˚C
10 IC
t=0.5ms
3
10ms
1 DC
1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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Part Number C3973
Description 2SC3973
Maker Panasonic Semiconductor
Total Page 3 Pages
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C3973 pdf
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