The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC3979, 2SC3979A
Silicon NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdown voltage high-speed switching ■ Features
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Parameter
Symbol Rating
Unit
e e) Collector-base voltage 2SC3979 VCBO
900
V
c typ (Emitter open)
2SC3979A
1 000
n d stage.
C3979 Datasheet
