C3979 Description
Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed.
C3979 Key Features
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
- Wide safe operation area
- Satisfactory linearity of forward current transfer ratio hFE
- Full-pack package which can be installed to the heat sink with one screw