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C3975 - 2SC3975

Key Features

  • s (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2.
  • High-speed switching.
  • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1.
  • Wide safe operation area.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 /.
  • Absolute Maximum Ratings TC = 25°C 16.2±0.5 (3.5) Solder Dip 1.1±0.1 0.6±0.2 Parameter Symbol Rating Unit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1 / ■ Absolute Maximum Ratings TC = 25°C 16.2±0.5 (3.5) Solder Dip 1.1±0.1 0.6±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 800 V c e.