q q q
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current
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20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 1700 1700 6 15 30 10 200 3.5 150.
55 to +150 Unit V V V A A A W ˚C ˚C
2.7±0.3
Symbol VCBO VCES VEBO IC ICP.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C5243. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q 1.5 1.5 Sol...
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.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current www.DataSheet4U.com 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 1700 1700 6 15 30 10 200 3.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2.7±0.3 Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg 0.6±0.2 5.45±0.3 10.9±0.