q High collector to base voltage VCBO q High collector to emitter VCEO
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 500 500 7 2.0 1.0 10 150.
55 to +150
Unit V V V A A W ˚C ˚C
s Electrical Characteristics (Ta=25˚C)
Parameter Collector c.
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Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
For high-speed switching
s Features
q High collector to base voltage VCBO q High collector to emitter VCEO
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 500 500 7 2.0 1.