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C5440 - 2SC5440

Features

  • s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage, and high reliability through the use of a glass passivation layer.
  • High-speed switching.
  • Wide safe operation area (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 /.
  • Absolute Maximum Ratings TC = 25°C 18.6±0.5 (2.0) Solder Dip 5.45±0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 500 V c e. d ty Colle.

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Note: The manufacturer provides a single datasheet file (C5440_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C5440
Manufacturer Panasonic
File Size 215.24 KB
Description 2SC5440
Datasheet download datasheet C5440 Datasheet
Additional preview pages of the C5440 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / ■ Absolute Maximum Ratings TC = 25°C 18.6±0.5 (2.0) Solder Dip 5.45±0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 500 V c e. d ty Collector-emitter voltage (E-B short) VCES 1 500 3.3±0.3 5.5±0.3 V n d stag tinue Collector-emitter voltage (Base open) VCEO 600 (2.
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