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Panasonic Electronic Components Datasheet

C5905 Datasheet

2SC5905

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C5905 pdf
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Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Features
High breakdown voltage: VCBO 1 700 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
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Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 700
V
1 700
V
600 V
7V
8A
20 A
30 A
70 W
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150 °C
55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
DataShee
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 10 A
IC = 10 A, IB = 2.5 A
IC = 10 A, IB = 2.5 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 10 A, Resistance loaded
IB1 = 2.5 A, IB2 = −5.0 A
50 µA
1 mA
50 µA
5 12
3V
1.5 V
3 MHz
3.0 µs
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Publication date: June 2004
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SJD00306BED
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Panasonic Electronic Components Datasheet

C5905 Datasheet

2SC5905

No Preview Available !

C5905 pdf
www.DataSheet4U.com
2SC5905
PC Ta
3
Without heat sink
2
1
0
0 50 100 150
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
10 1.4 A
1.2 A
1.0 A
0.8 A
8 1.6 A
0.6 A
0.4 A
6
4
0.2 A
2
0 IB = 0 A
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
12
8
4 Ta = 120°C
25°C
40°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
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10
1
101
VCE(sat) IC
Ta = 120°C
25°C
40°C
102
101
1 10
Collector current IC (A)
102
hFE VCE
102
Ta = 120°C
25°C
10 40°C
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1
102
101
1
10 102
Collector-emitter voltage VCE (V)
tf IB(END)
1 000
fH = 32 kHz
IC = 10 A
L load
800 DataShee
600
400
200
0
0.4 0.8 1.2 1.6
Base current IB(END) (A)
tstg IB(END)
2.0
fH = 32 kHz
IC = 10 A
L load
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6
Base current IB(END) (A)
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Area of safe operation
102
ICP = 30 A
PC = 70 W
10 IC = 20 A
10 ms
t = 100 µs
1 ms
DC operation
1
Area of safe operation (Horizontal operation)
fH = 32 kHz, TC < 90°C
ASO for a single
30 pulse load caused by
EHT flashover during
horizontal operation.
20
101
102
103
1
TC = 25°C
Single pulse
10
102 103
Collector-emitter voltage VCE (V)
10
< 1 mA
0
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
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Part Number C5905
Description 2SC5905
Maker Panasonic Semiconductor
Total Page 3 Pages
PDF Download
C5905 pdf
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