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D2276. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington 2.0 4.0 2.0 3.0 For power amplification Complementary to 2SB1503 s Features q Optimum for 11...
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wer amplification Complementary to 2SB1503 s Features q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V 26.0±0.5 10.0 6.0 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 1.5 1.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 160 140 5 15 8 120 3.5 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C
D2276 Datasheet
