This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon epitaxial planar type
For ESD protection
High electrostatic discharge ESD
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Total power dissipation *1
Electrostatic discharge *2
Tj 150 °C
Tstg –55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Marking Symbol: E1
Electrical Characteristics Ta = 25°C±3°C
Min Typ Max Unit
Zener voltage *1, 2
VZ IR = 1 mA
5.89 6.51 V
IR VR = 4 V
Ct VR = 0 V, f = 1 MHz
Temperature coefﬁcient of zener voltage *3
SZ IZ = 1 mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current ﬂow.
*3: Tj = 25°C to 150°C
Publication date: October 2010