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GN8062 - GaAs IC

Features

  • q q q 1 2 3 4 6.4±0.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.54±0.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Symbol VDD VSS VIN Pin voltage VIp.
  • 5 Rating 6.
  • 6.
  • 0.5 to VDD.
  • 1.5 1.5 to VDD VDD 50 40 145 700 150.
  • 55 to +150 Unit V V 0 to 15˚ 7.62±0.2 V V V mA mA mA mW ˚C ˚C ˚C VOUT.
  • 1 Power current Output current Allowable.

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Datasheet Details

Part number GN8062
Manufacturer Panasonic
File Size 55.54 KB
Description GaAs IC
Datasheet download datasheet GN8062 Datasheet
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GaAs MMICs GN8062 GN8062 GaAs IC For semiconductor laser drive s Features q q q 1 2 3 4 6.4±0.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.54±0.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Symbol VDD VSS VIN Pin voltage VIp *5 Rating 6 –6 – 0.5 to VDD–1.5 1.5 to VDD VDD 50 40 145 700 150 – 55 to +150 Unit V V 0 to 15˚ 7.62±0.2 V V V mA mA mA mW ˚C ˚C ˚C VOUT* 1 Power current Output current Allowable power dissipation Channel temperature Storage temperature Operating ambient temperature *1 *2 *3 *4 *5 IDD ISS *4 1 : GND 2 : NC 3 : NC 0.35max.
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