* High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 m
LN175
Panasonic Semiconductor
42.41 KB
Gaalas infrared light emitting diode.
Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 Featu.
📁 Related Datasheet
LN170WP38 Round Type LED (Panasonic)
LN172 GaAlAs Infrared Light Emitting Diode (Panasonic Semiconductor)
LN100 N-Channel MOSFET (Supertex)
LN1001 single-chip Power Bank dedicated IC (natlinear)
LN10N10 10A/100V withstand voltage N-channel enhanced FET (natlinear)
LN1120 300mA Low Dropout CMOS Voltage Regulators (natlinear)
LN1121 Ultra low Power Consumption Low Dropout CMOS Voltage Regulators (natlinear)
LN1130 High Ripple-Rejection Low Dropout CMOS Voltage Regulator (natlinear)
LN113006 General Purpose Relays (TE)
LN113009 General Purpose Relays (TE)
