* High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems
LN189S
Panasonic Semiconductor
44.03 KB
Gaalas infrared light emitting diode.
Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4.
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