LN51L diodes equivalent, gaas infrared light emitting diodes.
High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 45.51KB)