LN75X diode equivalent, gaalas infrared light emitting diode.
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
4.5±0.3
Not soldered
ø3.5±0.2
4.8±0.3 2.4 2.4
4.2±0.3 2.3 1.9
2..
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