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LN75X Datasheet - Panasonic Semiconductor

LN75X - GaAlAs Infrared Light Emitting Diode

LN75X Features

* High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter

LN75X_PanasonicSemiconductor.pdf