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Variable Capacitance Diodes
MA27V16
Silicon epitaxial planar type
Unit: mm
For VCO s Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD
0.27+0.05 –0.02 2
0.10+0.05 –0.02
1.00±0.05
1.40±0.05
1
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.60±0.05 5°
0.15 min.
5°
0 to 0.01
1: Anode 2: Cathode SSSMini2-F1 Package
Marking Symbol: K
s Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance * CD(1V)/CD(3V) rD VR = 3 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 17.45 7.73 2.
MA27V16 Datasheet
