Forward current (Average) IF(AV) = 500 mA rectification is possible.
Small reverse current IR
1.6±0.1 1 0 to 0.1 2.6±0.1 3.5±0.1 0.80±0.05
Unit: mm.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 500 3 125.
55 to +125 Unit V V mA °C °C
1: Anode 2: Cathode
5°.
Full PDF Text Transcription for MA2YD33 (Reference)
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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2YD33 Silicon epitaxial planar type For high frequency rectification Features Forward current (Average) IF(AV) = 50...
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quency rectification Features Forward current (Average) IF(AV) = 500 mA rectification is possible Small reverse current IR 1.6±0.1 1 0 to 0.1 2.6±0.1 3.5±0.1 0.80±0.05 Unit: mm Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 500 3 125 –55 to +125 Unit V V mA °C °C 1: Anode 2: Cathode 5° 2 0.55±0.1 5° 0.45±0.1 0.16+0.1 –0.
MA2YD33 Datasheet
